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Si4310BDY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V DS (V)
R DS(on) ( Ω )
I D (A)
FEATURES
? Halogen-free According to IEC 61249-2-21
Definition
Channel-1
Channel-2
30
0.011 at V GS = 10 V
0.016 at V GS = 4.5 V
0.0085 at V GS = 10 V
0.0095 at V GS = 4.5 V
10
8.2
14
13
? TrenchFET ? Power MOSFET
? 100 % R g Tested
? Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
? DC/DC Converters
SCHOTTKY PRODUCT SUMMARY
V SD (V)
V DS (V) Diode Forward Voltage
I F (A)
- Game Stations
- Video Equipment
30
0.53 V at 3 A
SO-14
2
D 1
D 1
G 1
G 2
S 2
S 2
S 2
1
2
3
4
5
6
7
14
13
12
11
10
9
8
S 1
S 1
D 2
D 2
D 2
D 2
D 2
G 1
D 1
G 2
D 2
Schottky Diode
Top View
Ordering Information: Si4310BDY-T1-E3 (Lead (Pb)-free)
Si4310BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S 1
N-Channel 1
MOSFET
S 2
N-Channel 2
MOSFET
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Channel-1
Channel-2
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
10 s
Steady State
± 20
30
10 s
Steady State
± 20
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
T A = 25 °C
T A = 70 °C
I D
I DM
10
8
40
7.5
6
14
11
50
9.8
7.8
A
Continuous Source Current (Diode Conduction) a
I S
1.8
1.04
2.73
1.33
Maximum Power Dissipation a
T A = 25 °C
T A = 70 °C
P D
2
1.28
1.14
0.73
3.0
1.9
1.47
0.94
W
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Channel-1
Channel-2
Schottky
Parameter
Symbol
Typ.
Max.
Typ.
Max.
Typ.
Max.
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Steady State
R thJA
R thJF
53
92
35
62.5
110
42
34
70
17
35
72
24
40
76
21
48
93
26
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 73064
S09-2436-Rev. B, 16-Nov-09
www.vishay.com
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